Precision transfer printing of ultra-thin AlInGaN micron-size light-emitting diodes

被引：0
|
作者：
Trindade, A. J. [1 ]
Massoubre, D.
Guilhabert, B. [1 ]
Zhu, D. [2 ]
Laurand, N. [1 ]
Gu, E. [1 ]
Watson, I. M. [1 ]
Humphreys, C. J. [2 ]
Dawson, M. D. [1 ]
机构：
[1] Univ Strathclyde, Inst Photon, SUPA, 106 Rottenrow, Glasgow G4 0NW, Lanark, Scotland
[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
来源：
2013 IEEE PHOTONICS CONFERENCE (IPC) | 2013年
关键词：
SEMICONDUCTOR NANOMATERIALS; ELECTRONICS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the fabrication of a mechanically-flexible 16x16 array of thin-film, micron-size LEDs emitting at 480 nm. Devices were transfer-printed onto a mechanically-flexible ITO backplane using a modified, high-precision (placement accuracy +/- 25 nm) assembly system.
引用
收藏
页码：217 / 218
页数：2
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