A Compact and High-Linearity 140-160 GHz Active Phase Shifter in 55 nm BiCMOS

被引：25

作者：

del Rio, David ^{[1
,2
]}

Gurutzeaga, Inaki ^{[1
,2
]}

Berenguer, Roc ^{[2
]}

Huhtinen, Ismo ^{[3
]}

Sevillano, Juan Francisco ^{[1
,2
]}

机构：

[1] CEIT Basque Res & Technol Alliance BRTA, Donostia San Sebastian 20018, Spain

[2] Univ Navarra, Dept Elect & Elect Engn, TECNUN, Technol Campus, Donostia San Sebastian 20018, Spain

[3] VTT Tech Res Ctr Finland, Oulu 90570, Finland

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2021年 / 31卷 / 02期

基金：

欧盟地平线“2020”;

关键词：

Transistors; Gain; Linearity; Couplers; Insertion loss; Phased arrays; BiCMOS integrated circuits; BiCMOS; millimeter-wave (mmW); phase shifter (PS); radio frequency integrated circuit (RFIC);

D O I：

10.1109/LMWC.2020.3037162

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents the design of a 140-160 GHz vector-modulator-type phase shifter, integrated in a 55-nm BiCMOS technology. The circuit is optimized to minimize the occupied area and maximize the linearity, facilitating its integration in D-band phased arrays. Test results show an average insertion loss of 4.5 dB, an OP 1 dB of -3.7 dBm, and rms gain/phase errors lower than 1.4 dB and 7.5 degrees. The circuit core occupies 0.05 mm(2), consuming less than 66 mW of dc power.

引用

页码：157 / 160

页数：4

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