The Child-Langmuir limit for semiconductors:: A numerical validation

被引:1
|
作者
Cáceres, MJ
Carrillo, JA
Degond, P
机构
[1] Univ Granada, Dept Matemat Aplicada, E-18071 Granada, Spain
[2] Univ Toulouse 3, MIP, UMR 5640, CNRS, F-31062 Toulouse, France
关键词
Boltzmann-Poisson system; Child-Langmuir limit; WENO schemes; semiconductor devices;
D O I
10.1051/m2an:2003011
中图分类号
O29 [应用数学];
学科分类号
070104 ;
摘要
The Boltzmann Poisson system modeling the electron flow in semiconductors is used to discuss the validity of the Child-Langmuir asymptotics. The scattering kernel is approximated by a simple relaxation time operator. The Child-Langmuir limit gives an approximation of the current-voltage characteristic curves by means of a scaling procedure in which the ballistic velocity is much larger that the thermal one. We discuss the validity of the Child-Langmuir regime by performing detailed numerical comparisons between the simulation of the Boltzmann Poisson system and the Child-Langmuir equations in test problems.
引用
收藏
页码:1161 / 1176
页数:16
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