Electronic structure and exchange interaction in Ga1-x Mn x As and In1-x Mn x Sb magnetic semiconductors

被引：8
|
作者：
Yarzhemsky, V. G. [1 ]
Murashov, S. V. [1 ]
Izotov, A. D. [1 ]
机构：
[1] Russian Acad Sci, NS Kurnakov Gen & Inorgan Chem Inst, Leninskii Pr 31, Moscow 119991, Russia
来源：
INORGANIC MATERIALS | 2016年 / 52卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
diluted magnetic semiconductors; spintronics; exchange interaction; FERROMAGNETISM;
D O I：
10.1134/S0020168516020175
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have calculated the electronic structure of Ga1-x Mn (x) As and In1-x Mn (x) Sb diluted magnetic semiconductors and shown that, in agreement with recent photoelectron spectroscopy data, the Mn 4s and Mn 3d orbitals are hybridized with the valence band of the host semiconductor. A new approach has been developed for calculating exchange interaction in diluted magnetic semiconductors, which is based on the spin polarization of s-electrons at a magnetic center due to single-center exchange s-d matrix elements. The magnitude of exchange interaction calculated using Hartree-Fock atomic wave functions and the electrondensity-functional approach agrees well with previous data.
引用
收藏
页码：89 / 93
页数：5
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