Fabrication of Pixelated Organic Light-Emitting Transistor (OLET) with a Pure Red-Emitting Organic Semiconductor

被引:23
|
作者
Oh, Sangyoon [1 ]
Kim, Jin Hong [1 ]
Park, Sang Kyu [1 ]
Ryoo, Chi Hyun [1 ]
Park, Soo Young [1 ]
机构
[1] Seoul Natl Univ, Dept Mat Sci & Engn, Ctr Supramol Optoelect Mat, 1 Gwanak Ro, Seoul 151744, South Korea
基金
新加坡国家研究基金会;
关键词
luminescent organic semiconductors; organic light-emitting transistors (OLET); pixelated emission; pure red; EFFICIENT RED; HIGH-MOBILITY; EMISSION; FLUORESCENCE; EXTRACTION; STACKING; CRYSTALS;
D O I
10.1002/adom.201901274
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A pure red-emitting organic light-emitting transistor (OLET) is successfully fabricated using a pi-extended dicyanodistyrylbenzene-type organic semiconductor material (Hex-4-TFPTA), which shows outstanding charge transport and solid-state luminescence at the same time. Based on the structural (X-ray) and photophysical analyses, it is found that the appropriate molecular stacking and highly allowed S-1 -> S-0 transition of Hex-4-TFPTA created the ambidextrous balance between electrical mobility (mu(e, FET) approximate to 1 cm(2) V-1 s(-1)) and solid-state luminescent quantum yield, even in the deep-red (DR) region (phi(F) = 28%). Remarkably, the color purity of the red Hex-4-TFPTA thin film (0.70, 0.30) is close to the National Television System Committee (NTSC) standard primary red (0.67, 0.33) in Commission Internationale de I'Eclairage (CIE) color space. Moreover, in this work, micropixelated areal OLET emission is demonstrated for the first time by patterning the organic layer via a novel soft-lithographic technique called "patterned taping."
引用
收藏
页数:7
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