Fabrication of integrated metallic MEMS devices

被引：1
|
作者：
Yalçinkaya, AD
Ravnkilde, JT
Hansen, O
机构：
[1] MIC, Natl Micro & Nanotechnol Res Ctr, DK-2800 Lyngby, Denmark
[2] Dicon A S, DK-2800 Lyngby, Denmark
来源：
ELECTRONICS LETTERS | 2002年 / 38卷 / 24期
关键词：
D O I：
10.1049/el:20021032
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators are characterised with respect to the quality factor.
引用
收藏
页码：1526 / 1527
页数：2
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