Microstructural properties of thermal induced microcrystalline silicon carbide thin films deposited by HWCVD

Amorphous Silicon carbide samples were prepared by Hot -Wire Chemical Vapor Deposition (HWCVD) at low temperature of the substrate. A gradual thermal annealing under vacuum induced a network rearrangement as shown by a change in the samples microstructure. The breaking of Si-H-n and C-H-n bonds, followed by hydrogen effusion, led all the available carbon atoms, originating mainly from C-H-n groups to bond to the Si atoms originating mainly from the SiHn groups, and crystallize into SiC phase. The structural details are presented as studied by Fourier transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM) and non contact atomic force microscopy (AFM).