Transient Response of 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation: a 3-D Simulation Study

被引：12
|
作者：
Munteanu, Daniela [1 ]
Autran, Jean-Luc [1 ]
机构：
[1] CNRS, UMR 6242, IM2NP, F-13384 Marseille 13, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2009年 / 56卷 / 04期
关键词：
Charge collection; GAA; heavy ion; multi-channel nanowire MOSFETs; multiple-gate MOSFET; single event transient; SINGLE-EVENT TRANSIENTS; GATE; DEVICES;
D O I：
10.1109/TNS.2009.2016564
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The single-event response of 3-D Multi-Channel nanowire MOSFETs (MCFET) is investigated using 3-D numerical simulation. The variation with time of the main internal parameters (electrostatic potential and electron density) of the MCFET after the ion strike is analyzed in detail. The drain current transients and collected charge depend on the ion strike location, direction, and track radius. The lateral spacing between adjacent nanowire stacks is found to be a key-parameter in the analysis of the worst case location of the ion strike.
引用
收藏
页码：2042 / 2049
页数：8
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