Defect generation and reliability of ultra-thin SiO2 at low voltage

被引：0

作者：

Stathis, JH ^{[1
]}

DiMaria, DJ ^{[1
]}

机构：

[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4 | 2000年 / 2000卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Electrons tunneling through the gate oxide generate defects until a critical density is reached and the oxide breaks down. The critical defect density is explained by the formation of a percolation path of defects across the oxide. The rate of defect generation decreases exponentially with supply voltage, but the tunnel current also increases exponentially with decreasing oxide thickness, leading to a diminishing margin for reliability as device dimensions are scaled.

引用

页码：33 / 44

页数：4

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