Enhanced real-space transfer in delta-doped GaAs/In0.1Ga0.9As/In0.25Ga0.75As two-step channel heterojunctions

被引：5

作者：

Su, JS ^{[1
]}

Hsu, WC ^{[1
]}

Lin, W ^{[1
]}

Lin, YS ^{[1
]}

机构：

[1] CHUNG HWA TELECOMMUN LAB,TAYUAN,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 08期

关键词：

D O I：

10.1063/1.365718

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A two-step channel In0.1Ga0.9As/In(0.2)5Ga(0.75)As heterostructure real-space transfer transistor grown by low-pressure metalorgonic chemical vapor deposition is implemented. By virtue of delta doping, shallow ohmic contacts and two-step channel, a high peak-to-valley current ratio up to 260 000 at 300 K can be obtained at low collector voltage (V-c=3 V). Moreover, from Shubnikov-de Haas (SdH) measurements,we observe a positive persistent-photoconductivity effect and variations of quantum lifetime. The SdH result is in good agreement with the critical drained-to-source onset voltage of negative differential resistance. (C) 1997 American Institute of Physics.

引用

页码：4076 / 4080

页数：5

共 24 条

[21] A NOVEL DELTA-DOPED GAAS/INGAAS REAL-SPACE TRANSFER TRANSISTOR WITH HIGH PEAK-TO-VALLEY RATIO AND HIGH-CURRENT DRIVING CAPABILITY
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[23] HIGH-PERFORMANCE 3-TERMINAL DELTA-DOPED GAAS NEGATIVE-RESISTANCE FIELD-EFFECT TRANSISTOR BASED ON REAL-SPACE TRANSFER
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[24] Theory of high-field electron transport in the heterostructures AlxGa1-xAs/GaAs/AlxGa1-xAs with delta-doped barriers. Effect of real-space transfer
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