Enhanced real-space transfer in delta-doped GaAs/In0.1Ga0.9As/In0.25Ga0.75As two-step channel heterojunctions

被引：5
|
作者：
Su, JS [1 ]
Hsu, WC [1 ]
Lin, W [1 ]
Lin, YS [1 ]
机构：
[1] CHUNG HWA TELECOMMUN LAB,TAYUAN,TAIWAN
来源：
JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 08期
关键词：
D O I：
10.1063/1.365718
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A two-step channel In0.1Ga0.9As/In(0.2)5Ga(0.75)As heterostructure real-space transfer transistor grown by low-pressure metalorgonic chemical vapor deposition is implemented. By virtue of delta doping, shallow ohmic contacts and two-step channel, a high peak-to-valley current ratio up to 260 000 at 300 K can be obtained at low collector voltage (V-c=3 V). Moreover, from Shubnikov-de Haas (SdH) measurements,we observe a positive persistent-photoconductivity effect and variations of quantum lifetime. The SdH result is in good agreement with the critical drained-to-source onset voltage of negative differential resistance. (C) 1997 American Institute of Physics.
引用
收藏
页码：4076 / 4080
页数：5
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