Study of optical characteristics of structures with strongly strained In x Ga1-x As quantum wells

被引：5
|
作者：
Vinokurov, D. A. [1 ]
Kapitonov, V. A. [1 ]
Nikolaev, D. N. [1 ]
Sokolova, Z. N. [1 ]
Stankevich, A. L. [1 ]
Shamakhov, V. V. [1 ]
Tarasov, I. S. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2009年 / 43卷 / 10期
基金：
俄罗斯基础研究基金会;
关键词：
CHEMICAL-VAPOR-DEPOSITION; MU-M; HETEROSTRUCTURES; WAVELENGTH; LASERS; PARAMETERS; ALLOYS;
D O I：
10.1134/S1063782609100133
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Results of photoluminescence (PL) studies of heterostructures with strongly strained InxGa(1 - x) As quantum wells (QWs) are presented. It is shown that the dependence of the PL intensity on the QW thickness has a maximum whose position depends on the composition of the In (x) Ga1 - x As solid solution. The PL wavelength at the maximum intensity is 1.13 A mu m at a QW thickness of 60 A mu m at a QW thickness of 50 for x = 0.39 and 0.42, respectively.
引用
收藏
页码：1334 / 1337
页数：4
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