Influence of Ni2+ Substitution for Zn2+ on Microwave Dielectric Properties of Zn1-xNixZrNb2O8 Ceramics

被引：2

作者：

Xiao, Mi ^{[1
]}

Zhang, Peng ^{[1
]}

Sun, Hongrui ^{[1
]}

Zhou, Ziqi ^{[1
]}

Zhang, Ping ^{[1
]}

机构：

[1] Tianjin Univ, Sch Elect & Informat Engn, Minist Educ, Key Lab Adv Ceram & Machining Technol, Tianjin 300072, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2019年 / 48卷 / 10期

基金：

中国国家自然科学基金;

关键词：

Microwave dielectric properties; bond ionicity; lattice energy; bond energy; CRYSTAL-STRUCTURE; LATTICE ENERGY; BOND IONICITY;

D O I：

10.1007/s11664-019-07449-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dependence of microwave dielectric properties on the crystal structure of Zn1-xNixZrNb2O8 was investigated as a function of NiO content (x = 0, 0.02, 0.04, 0.06, 0.08). Pure single phase with monoclinic wolframite structure was obtained through solid-state reacti. The unit-cell volume of the specimens decreased with NiO content because of the smaller ionic radius of Ni2+ than Zn2+. Dielectric constant (K) of the sintered specimen was affected by bond-ionicity. Quality factor (Q x f(0)) was analyzed depending on the lattice-energy. With the increase of Ni2+, temperature coefficient of resonant frequency (tau(f)) of specimens increased due to the increase of B-site bond energy. The sample of Zn1-xNixZrNb2O8 (x = 0.08) sintered at 1250 degrees C for 4 h showed excellent microwave dielectric properties, epsilon(r) of 25.72, Q x f(0) value of 73224 GHz, and tau(f) of - 39.14 ppm/degrees C.

引用

页码：6553 / 6560

页数：8

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