Junction parameter control of Bi2Sr2CaCu2O8+δ stacked junctions by annealing

The control of the critical current density (J(c)) and the junction resistance (R-N) along the c axis of intrinsic Josephson junctions (IJJs) on a high-T-c superconductor is very important for applying the IJJs to electronic devices. For controlling these junction parameters, we have clarified the relationship of J(c), R-N, and the carrier density in Bi2Sr2CaCu2O8+delta (Bi-2212) whiskers by changing the carrier density with an annealing process. As a result, the J(c) decreased, and the R-N increased systematically when the carrier density decreased. The values of J(c) and R-N could be controlled by a change in the carrier density. (C) 2003 American Institute of Physics.