Isotopic fractionation in low-energy ion implantation

被引:25
|
作者
Ponganis, KV
Graf, T
Marti, K
机构
[1] Department of Chemistry, University of California San Diego, San Diego
[2] Department of Chemistry, University of California San Diego, San Diego, CA 92093-0317
关键词
D O I
10.1029/97JE01686
中图分类号
P3 [地球物理学]; P59 [地球化学];
学科分类号
0708 ; 070902 ;
摘要
The evolutions of planetary atmospheres and other solar system reservoirs have been affected by a variety of fractionating mechanisms. It has been suggested that one of these mechanisms could be low-energy ion implantation. Bernatowicz and Hagee [1987] showed that Kr and Xe implanted at low energy onto tungsten are fractionated by approximately 1% per amu, favoring the heavy isotopes; we confirm these effects. We have extended these studies to Ar and Ne, using a modified Bayard-Alpert type implanter design of cylindrical symmetry with collector potentials of -40 to -100 V, and observe systematically larger mass dependent isotopic fractionation for argon and neon, greater than or equal to 3% per amu and greater than or equal to 4% per amu, respectively. These fractionations scale approximately as Delta m/m for all of the noble gases measured, consistent with the findings of Bernatowicz and coworkers. Experimental data at higher energies and predictions by TRIM (Transport of Ions in Matter) code simulations indicate that sticking probabilities may depend upon the mass ratios of projectile and target. Many natural environments for low-energy ion implantation existed in the early solar nebula, such as in dusty plasmas or in the interaction of the bipolar outflow with small grains or in the wind of the early active Sun with accreting planetesimals. Low-energy ions provide viable sources for gas loading onto nebular dust grains; the result is isotopic and elemental fractionation of the projectiles.
引用
收藏
页码:19335 / 19343
页数:9
相关论文
共 50 条
  • [21] ECRIS/EBIS Based Low-Energy Ion Implantation Technologies
    Zschornack, Guenter
    Laux, Paul-Friedmar
    Philipp, Alexandra
    Ritter, Erik
    Ravelosona, Dafine
    Schmidt, Mike
    2018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018), 2018, : 168 - 171
  • [22] Hydrogen passivation of silicon carbide by low-energy ion implantation
    Achtziger, N
    Grillenberger, J
    Witthuhn, W
    Linnarsson, MK
    Janson, MS
    Svensson, BG
    APPLIED PHYSICS LETTERS, 1998, 73 (07) : 945 - 947
  • [23] CHANNELING EFFECT FOR LOW-ENERGY ION-IMPLANTATION IN SI
    CHO, K
    ALLEN, WR
    FINSTAD, TG
    CHU, WK
    LIU, J
    WORTMAN, JJ
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR): : 265 - 272
  • [24] LOW-ENERGY ION-IMPLANTATION IN POLYBITHIOPHENE - MICROSTRUCTURING AND MICROANALYSIS
    JUNG, KG
    SCHULTZE, JW
    ROBINSON, KS
    SCHMIEDEL, H
    FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY, 1995, 353 (3-4): : 282 - 289
  • [25] Low-energy BF2+ ion implantation in silicon
    Hirano, D
    Ishikawa, T
    Kitahara, M
    Inada, T
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY, SUPPLEMENT NO.16, 1997, : 153 - 156
  • [26] DISTRIBUTION OF DEPOSITED ENERGY BY LOW-ENERGY ION-IMPLANTATION IN COMPOUND MATERIALS
    JIANG, BY
    DAI, R
    VACUUM, 1989, 39 (2-4) : 331 - 333
  • [27] LOW-ENERGY ION-BEAM WORK FOR THE PREPARATION OF VARIOUS DELICATE ISOTOPIC SAMPLES AS WELL AS FOR SPUTTERING AND IMPLANTATION TASKS
    HECHTL, E
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 26 (1-3): : 37 - 43
  • [28] Molecular dynamics (MD) modeling for low-energy ion implantation process
    Kwon, O
    Kim, K
    Seo, J
    Won, T
    Dunham, S
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 (05) : 1327 - 1331
  • [29] Modifying the conductivity of polypyrrole through low-energy lead ion implantation
    Booth, Marsilea Adela
    Leveneur, Jerome
    Costa, Alexsandro Santos
    Kennedy, John
    Harbison, SallyAnn
    Travas-Sejdic, Jadranka
    MATERIALS CHEMISTRY AND PHYSICS, 2012, 136 (2-3) : 903 - 909
  • [30] Blueshifting of InGaAsP/InP laser diodes by low-energy ion implantation
    Paquette, M
    Beauvais, J
    Beerens, J
    Poole, PJ
    Charbonneau, S
    Miner, CJ
    Blaauw, C
    APPLIED PHYSICS LETTERS, 1997, 71 (26) : 3749 - 3751