Structural and magnetic properties of epitaxially grown Ge1-xFex thin films:: Fe concentration dependence

被引：27
|
作者：
Shuto, Yusuke
Tanaka, Masaaki
Sugahara, Satoshi
机构：
[1] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan
[2] Japan Sci & Technol Agcy, SORST, Kawaguchi, Saitama 3320012, Japan
[3] Tokyo Inst Technol, Imaging Sci & Engn Lab, Yokohama, Kanagawa 2268502, Japan
[4] Tokyo Inst Technol, Dept Elect & Appl Phys, Yokohama, Kanagawa 2268502, Japan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 13期
基金：
日本科学技术振兴机构;
关键词：
D O I：
10.1063/1.2718270
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ge1-xFex films (x=2.0%-24.0%) grown by low-temperature molecular beam epitaxy were shown to have a diamond-type crystal structure without any other crystallographic phase of precipitates, although they contain slightly nonuniform Fe distribution and tiny stacking fault defects. The lattice constant decreases linearly with increasing the Fe content x from 0% to 13.0%, and is saturated for x > 13.0%. The Curie temperature (T-C) increases in proportion to x (<= 13.0%) and is saturated for x > 13.0%. The maximum T-C value was similar to 170 K at x > 13.0%. The structural and magnetic properties indicate that Ge1-xFex is an "intrinsic" ferromagnetic semiconductor. (c) 2007 American Institute of Physics.
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页数：3
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