Electro-photo modulation of the fermi level in WSe2/graphene van der Waals heterojunction

被引：3
|
作者：
Sun, Honghui [1 ,2 ]
Yang, Hang [3 ]
Fang, Liang [1 ,2 ]
Zhang, Jiangwei [1 ,2 ]
Wang, Zhiyuan [1 ,2 ]
Jiang, Tian [1 ,4 ]
机构：
[1] Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China
[2] Natl Univ Def Technol, Coll Comp, Changsha 410073, Hunan, Peoples R China
[3] Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China
[4] Natl Univ Def Technol, Coll Optoelect Sci & Engn, Changsha 410073, Hunan, Peoples R China
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2017年 / 88卷
基金：
中国国家自然科学基金;
关键词：
WSe2/graphene heterojunction; Rectification; Photodetection; Photovoltaic; Fermi level; Current peak; PHOTOCURRENT GENERATION; TUNGSTEN DISELENIDE; BROAD-BAND; WSE2; GRAPHENE; MOS2; HETEROSTRUCTURES; PHOTODETECTORS; TRANSISTORS; TRANSPORT;
D O I：
10.1016/j.physe.2016.11.026
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report an electro-photo double modulation of the fermi level in a WSe2/graphene heterojunction. The heterojunction exhibits high I-ON/I-OFF ratio (similar to 10(3)) in transfer characteristic in dark and distinct rectification behavior in output characteristic under light illumination, respectively. Time-dependent photoresponse reveals that the heterojunction has a considerable potential in the application of photodetection. Interestingly, an exotic current peak is observed in transfer characteristic under light illumination. This novel behavior is attributed to the tunable fermi level at the WSe2/graphene heterojunction by electro-photo double modulation. The results may be helpful to develop tunable photovoltaic optoelectronics based on under Waals heterojunctions.
引用
收藏
页码：279 / 283
页数：5
相关论文
共 50 条
  • [41] Broken-Gap PtS2/WSe2 van der Waals Heterojunction with Ultrahigh Reverse Rectification and Fast Photoresponse
    Tan, Chaoyang
    Yin, Shiqi
    Chen, Jiawang
    Lu, Yuan
    Wei, Wensen
    Du, Haifeng
    Liu, Kailang
    Wang, Fakun
    Zhai, Tianyou
    Li, Liang
    ACS NANO, 2021, 15 (05) : 8328 - 8337
  • [42] Transient Reflection Spectroscopy on Ultrafast Interlayer Charge Transfer Processes in a MoS2/WSe2 van der Waals Heterojunction
    Chen, Zhihui
    Zhu, Menglong
    Ren, Tianhua
    He, Jun
    Loh, Kian Ping
    Xu, Qing-Hua
    JOURNAL OF PHYSICAL CHEMISTRY C, 2021, 125 (48): : 26575 - 26582
  • [43] Gate tunable WSe2-BP van der Waals heterojunction devices
    Chen, Peng
    Zhang, Ting Ting
    Zhang, Jing
    Xiang, Jianyong
    Yu, Hua
    Wu, Shuang
    Lu, Xiaobo
    Wang, Guole
    Wen, Fusheng
    Liu, Zhongyuan
    Yang, Rong
    Shi, Dongxia
    Zhang, Guangyu
    NANOSCALE, 2016, 8 (06) : 3254 - 3258
  • [44] Ultrasensitive Phototransistor Based on WSe2-MoS2 van der Waals Heterojunction
    Shin, Gwang Hyuk
    Park, Cheolmin
    Lee, Khang June
    Jin, Hyeok Jun
    Choi, Sung-Yool
    NANO LETTERS, 2020, 20 (08) : 5741 - 5748
  • [45] Ultrafast dynamics of spin relaxation in monolayer WSe2 and the WSe2/graphene heterojunction
    Chen, Xin
    Zheng, Shu-Wen
    Wang, Xue-Peng
    Wang, Hai-Yu
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2022, 24 (27) : 16538 - 16544
  • [46] Van der Waals epitaxial growth of few layers WSe2 on GaP(111)B
    Chapuis, Niels
    Mahmoudi, Aymen
    Coinon, Christophe
    Troadec, David
    Vignaud, Dominique
    Patriarche, Gilles
    Roussel, Pascal
    Ouerghi, Abdelkarim
    Oehler, Fabrice
    Wallart, Xavier
    2D MATERIALS, 2024, 11 (03):
  • [47] Van der Waals Interlayer Coupling Induces Distinct Linear Dichroism in WSe2 Photodetectors
    Wei, Zhenhua
    Zheng, Xiaoming
    Wei, Yuehua
    Zhang, Xiangzhe
    Luo, Wei
    Liu, Jinxin
    Peng, Gang
    Huang, Han
    Lv, Tieyu
    Zhang, Xueao
    Deng, Chuyun
    ADVANCED OPTICAL MATERIALS, 2023, 11 (04)
  • [48] Reconfigurable Diodes Based on Vertical WSe2 Transistors with van der Waals Bonded Contacts
    Avsar, Ahmet
    Marinov, Kolyo
    Marin, Enrique Gonzalez
    Iannaccone, Giuseppe
    Watanabe, Kenji
    Taniguchi, Takashi
    Fiori, Gianluca
    Kis, Andras
    ADVANCED MATERIALS, 2018, 30 (18)
  • [49] Spin filtering effect in all-van der Waals heterostructures with WSe2 barriers
    Zheng, Yuanhui
    Ma, Xiaolei
    Yan, Faguang
    Lin, Hailong
    Zhu, Wenkai
    Ji, Yang
    Wang, Runsheng
    Wang, Kaiyou
    NPJ 2D MATERIALS AND APPLICATIONS, 2022, 6 (01)
  • [50] Electronic Tuning in WSe2/Au via van der Waals Interface Twisting and Intercalation
    Wu, Qilong
    Tagani, Meysam Bagheri
    Zhang, Lijie
    Wang, Jing
    Xia, Yu
    Zhang, Li
    Xie, Sheng-Yi
    Tian, Yuan
    Yin, Long-Jing
    Zhang, Wen
    Rudenko, Alexander N.
    Wee, Andrew T. S.
    Wong, Ping Kwan Johnny
    Qin, Zhihui
    ACS NANO, 2022, 16 (04) : 6541 - 6551
12345