Imaging defects and junctions in single-walled carbon nanotubes by voltage-contrast scanning electron microscopy

被引：19
|
作者：
Vijayaraghavan, Aravind [1 ]
Marquardt, Christoph W. [1 ,2 ]
Dehm, Simone [1 ]
Hennrich, Frank [1 ]
Krupke, Ralph [1 ,3 ]
机构：
[1] KIT, Inst Nanotechnol, D-76021 Karlsruhe, Germany
[2] KIT, Inst Phys, D-76021 Karlsruhe, Germany
[3] KIT, DFG Ctr Funct Nanostruct CFN, D-76021 Karlsruhe, Germany
来源：
CARBON | 2010年 / 48卷 / 02期
关键词：
SPECTROSCOPY; TRANSISTORS; TRANSITION;
D O I：
10.1016/j.carbon.2009.09.067
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Voltage-contrast scanning electron microscopy is demonstrated as a new technique to locate and characterize defects in single-walled carbon nanotubes. This method images the surface potential along and surrounding a nanotube in device configuration and it is used here to study the following: (a) structural point-defects formed during nanotube growth, (b) nano-scale gap formed by high-current electrical breakdown, (c) electronic defect such as electron-irradiation induced metal-insulator transition, and (d) charge injection into the substrate which causes hysteresis in nanotube devices. The in situ characterization of defect healing under high bias is also shown. The origin of voltage-contrast, the influence of the above defects on the contrast profiles and optimum imaging conditions are discussed. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码：494 / 500
页数：7
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