Low Density Metamorphic Quantum Dot structures with emission in the 1.3-1.55 μm window

被引：1
|
作者：
Seravalli, L. [1 ]
Trevisi, G. [1 ]
Frigeri, P. [1 ]
Bocchi, C. [1 ]
机构：
[1] IMEM CNR Inst, I-43100 Parma, Italy
来源：
QUANTUM DOTS 2010 | 2010年 / 245卷
关键词：
ARRAYS;
D O I：
10.1088/1742-6596/245/1/012074
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on the molecular beam epitaxy growth of InAs/InGaAs metamorphic quantum dot structures for single-photon operation at long wavelengths. Low density of quantum dots has been achieved by depositing sub-critical coverages of InAs, while the redshift of emission was obtained by growing the nanostructures on relaxed InGaAs buffers. By optimizing the design and growth parameters, such as the InAs coverage, the post growth annealing time and the compositions of InGaAs confining layers, we were able to obtain structures with quantum dot densities of the order of the 10(8) cm(-2) and emission in the whole range 1.3 - 1.55 mu m at low temperature.
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页数：4
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