Metamorphic approach to single quantum dot emission at 1.55 μm on GaAs substrate

被引：49

作者：

Semenova, E. S. ^{[1
]}

Hostein, R. ^{[1
]}

Patriarche, G. ^{[1
]}

Mauguin, O. ^{[1
]}

Largeau, L. ^{[1
]}

Robert-Philip, I. ^{[1
]}

Beveratos, A. ^{[1
]}

Lemaitre, A. ^{[1
]}

机构：

[1] Lab Photon & Nanostruct, CNRS, Route Nozay, F-91460 Marcoussis, France

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 10期

关键词：

D O I：

10.1063/1.2927496

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication and the characterization of InAs quantum dots (QDs) embedded in an indium rich In(0.42)Ga(0.58)As metamorphic matrix grown on a GaAs substrate. Growth conditions were chosen so as to minimize the number of threading dislocations and other defects produced during the plastic relaxation. Sharp and bright lines, originating from the emission of a few isolated single quantum dots, were observed in microphotoluminescence around 1.55 mu m at 5 K. They exhibit, in particular, a characteristic exciton/biexciton behavior. These QDs could offer an interesting alternative to other approaches as InAs/InP QDs for the realization of single photon emitters at telecom wavelengths. (C) 2008 American Institute of Physics.

引用

页数：4

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