Fabrication of GaSb/ZnTe heterojunctions by pulsed laser deposition

GaSb/ZnTe heterojunctions were fabricated by pulsed laser deposition using a Q-switched ruby laser (694 nm). The p-p type heterojunction was characterized by I-V in the temperature range 180-300K and C-V techniques at 300K from where the ideality factor and band discontinuity were deduced. The ideality factor was found to be 2.2 indicating relatively high density of interface states. The values of V-D1 and V-D2 determined ham the intercept on the voltage axis of 1/C-2 - V plots for both bias directions from C-V measurements were found to he 0.16 V for GaSb and 0.70 V for ZnTe.