Hydrogenic impurity states in wurtzite GaN/AlGaN coupled quantum dots

被引：0
|
作者：
Xia, Congxin [1 ]
Jiang, Fengchun [2 ]
Wei, Shuyi [1 ]
机构：
[1] Henan Normal Univ, Dept Phys, Xinxiang 453007, Peoples R China
[2] Zhengzhou Univ Light Ind, Dept Technol & Phys, Zhengzhou 450002, Peoples R China
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2008年 / 44卷 / 01期
关键词：
quantum dots; hydrogenic donor impurity; built-in electric fields;
D O I：
10.1016/j.spmi.2008.03.004
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The ground-state binding energy of a hydrogenic donor impurity in wurtzite (WZ) GaN/AlGaN coupled quantum dots (QDs) is calculated by means of a variational method, considering the strong built-in electric fields caused by the piezoelectricity and spontaneous polarizations. The strong built-in electric fields induce an asymmetrical distribution of the ground-state binding energy with respect to the center of the coupled QDs. If the impurity is located at the low dot, the ground-state binding energy is insensitive to the interdot barrier width of WZ GaN/AlGaN coupled QDs. (c) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：121 / 126
页数：6
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