Hydrogenic impurity states in wurtzite GaN/AlGaN coupled quantum dots

被引：0

作者：

Xia, Congxin ^{[1
]}

Jiang, Fengchun ^{[2
]}

Wei, Shuyi ^{[1
]}

机构：

[1] Henan Normal Univ, Dept Phys, Xinxiang 453007, Peoples R China

[2] Zhengzhou Univ Light Ind, Dept Technol & Phys, Zhengzhou 450002, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2008年 / 44卷 / 01期

关键词：

quantum dots; hydrogenic donor impurity; built-in electric fields;

D O I：

10.1016/j.spmi.2008.03.004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The ground-state binding energy of a hydrogenic donor impurity in wurtzite (WZ) GaN/AlGaN coupled quantum dots (QDs) is calculated by means of a variational method, considering the strong built-in electric fields caused by the piezoelectricity and spontaneous polarizations. The strong built-in electric fields induce an asymmetrical distribution of the ground-state binding energy with respect to the center of the coupled QDs. If the impurity is located at the low dot, the ground-state binding energy is insensitive to the interdot barrier width of WZ GaN/AlGaN coupled QDs. (c) 2008 Elsevier Ltd. All rights reserved.

引用

页码：121 / 126

页数：6

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