Carrier Transport and Stress Engineering in Advanced Nanoscale MOS Transistors

被引：3
|
作者：
Uchida, Ken [1 ]
Saitoh, Masumi [2 ]
机构：
[1] Tokyo Inst Technol, Grad Sch Engn, Dept Phys Elect, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528552, Japan
[2] Toshiba Co Ltd, Res & Dev Ctr, Adv LSI Technol Lab, Tokyo, Japan
来源：
PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS | 2009年
关键词：
D O I：
10.1109/VTSA.2009.5159267
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reviews the carrier transport mechanisms and stress engineering in advanced nanoscale MOSFETs. First, carrier transport in bulk (100) and (110) MOSFETs is reviewed. Sub-band structure engineering to enhance mobility as well as ballistic current is also examined.
引用
收藏
页码：6 / +
页数：2
相关论文
共 50 条
  • [31] Stress and recovery transients in bipolar transistors and MOS structures
    Ingvarson, F
    Ragnarsson, LÅ
    Lundgren, P
    Jeppson, KO
    ICMTS 1999: PROCEEDINGS OF THE 1999 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 1999, : 173 - 178
  • [32] Contact Engineering of Monolayer CVD MoS2 Transistors
    Alharbi, Abdullah
    Shahrjerdi, Davood
    2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2017,
  • [33] Pseudo-Spectral Method for the Modelling of Quantization Effects in Nanoscale MOS Transistors
    Paussa, Alan
    Conzatti, Francesco
    Breda, Dimitri
    Vermiglio, Rossana
    Esseni, David
    SISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2010, : 299 - 302
  • [34] Carrier transport at the metal-MoS2 interface
    Ahmed, Faisal
    Choi, Min Sup
    Liu, Xiaochi
    Yoo, Won Jong
    NANOSCALE, 2015, 7 (20) : 9222 - 9228
  • [35] Effects of molecular alignment on carrier transport in organic transistors
    Nagamatsu, S
    Tanigaki, N
    Yoshida, Y
    Takashima, W
    Yase, K
    Kaneto, K
    SYNTHETIC METALS, 2003, 137 (1-3) : 923 - 924
  • [36] DEVICE PERFORMANCE DEGRADATION OF SHORT CHANNEL MOS-TRANSISTORS DUE TO HOT-CARRIER INJECTION AND DRAIN PROFILE ENGINEERING
    ZEISLER, P
    RUGE, I
    NTZ ARCHIV, 1986, 8 (08): : 191 - 197
  • [37] Comparison of Advanced Transport Models for Nanoscale nMOSFETs
    Palestri, P.
    Alexander, C.
    Asenov, A.
    Baccarani, G.
    Bournel, A.
    Braccioli, M.
    Cheng, B.
    Dollfus, P.
    Esposito, A.
    Esseni, D.
    Ghetti, A.
    Fiegna, C.
    Fiori, G.
    Aubry-Fortuna, V.
    Iannaccone, G.
    Martinez, A.
    Majkusiak, B.
    Monfray, S.
    Reggiani, S.
    Riddet, C.
    Saint-Martin, J.
    Sangiorgi, E.
    Schenk, A.
    Selmi, L.
    Silvestri, L.
    Walczak, J.
    ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON, 2009, : 125 - +
  • [38] Calculations of hole mass in [110]-uniaxially strained silicon for the stress-engineering of p-MOS transistors
    Guillaume, T.
    Mouis, M.
    SOLID-STATE ELECTRONICS, 2006, 50 (04) : 701 - 708
  • [39] RSDFT-NEGF transport simulations in realistic nanoscale transistors
    Mil'nikov, Gennady
    Iwata, Jun-ichi
    Mori, Nobuya
    Oshiyama, Atsushi
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2023, 22 (05) : 1181 - 1201
  • [40] Universal signature of ballistic transport in nanoscale field effect transistors
    Schliemann, A
    Worschech, L
    Forchel, A
    Curatola, G
    Iannaccone, G
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 1039 - 1042
12345