Superconductivity in Y2Pd(Ge1-xSix)3 (x=0-1)

被引:0
|
作者
Mori, Katsunori [1 ]
Koshi, Yasunobu [1 ]
Nishimura, Katsuhiko [1 ]
机构
[1] Toyama Univ, Fac Engn, 3190 Gofuku, Toyama 9308555, Japan
来源
关键词
superconductivity; Y2Pd(Ge1-xSix)(3); electron-phonon coupling constant;
D O I
暂无
中图分类号
O414.1 [热力学];
学科分类号
摘要
The electrical resistivity (2 - 300K), magnetization (2 - 10 K), and specific heat (0.5 - 10 K) were measured in Y2Pd(Ge1-xSix)(3), which is of AlB2-type structure as the same as MgB2. The superconducting critical temperature showed a maximum of T-c = 3.48 K near x = 0.05 and monotonically decreased with x increasing up to x = 0.7 in Si substitution. The variation of T-c with Si concentration is related to the electron-phonon coupling constant X, which was calculated by use of the McMillan's equation. The variation of lambda also exhibited a maximum near x = 0.05, and it monotonically decreased with x increasing up to x = 0.7 in Si substitution.
引用
收藏
页码:649 / +
页数:2
相关论文
共 50 条
  • [21] Spin reorientation in GdMn2(Ge1-xSix)2 compounds
    Mushnikov, N. V.
    Gerasimov, E. G.
    Terentev, P. B.
    Gaviko, V. S.
    Gorbunov, D. I.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2024, 1000
  • [22] Structure and magnetic properties of SmMn2(Ge1-xSix)(2)
    Wang, YG
    Yang, FM
    Tang, N
    Hu, JF
    Zhou, KW
    Chen, CP
    Wang, QD
    deBoer, FR
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (12) : 6898 - 6902
  • [23] Magnetic properties of the SmMn2(Ge1-xSix)(2) system
    Saha, S
    Ali, N
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) : 5233 - 5235
  • [24] Defect formation in Ge1-xSix/Ge(111) epitaxial heterostructures
    Yugova, TG
    Mil'vidskii, MG
    Vdovin, VI
    PHYSICS OF THE SOLID STATE, 2004, 46 (08) : 1520 - 1527
  • [25] Raman scattering study of Cu(Ge1-xSix)O3
    Ogita, N
    Tsunezumi, Y
    Akimitsu, J
    Udagawa, M
    PHYSICA B, 1999, 263 : 832 - 834
  • [26] Raman scattering study of Cu(Ge1-xSix)O3
    Ogita, Norio
    Tsunezumi, Yasuhiro
    Akimitsu, Jun
    Udagawa, Masayuki
    Physica B: Condensed Matter, 1999, 263 : 832 - 834
  • [27] Transport properties of two-dimensional hole gas in a Ge1-xSix/Ge/Ge1-xSix quantum well in the vicinity of metal-insulator transition
    Arapov, Yu. G.
    Neverov, V. N.
    Harus, G. I.
    Shelushinina, N. G.
    Yakunin, M. V.
    Guldina, S. V.
    Karskanov, I. V.
    Kuznetsov, O. A.
    de Visser, A.
    Ponomarenko, L.
    SEMICONDUCTORS, 2007, 41 (11) : 1315 - 1322
  • [28] Czochralski growth of bulk crystals of Ge1-xSix alloys
    Matsui, A
    Yonenaga, I
    Sumino, M
    JOURNAL OF CRYSTAL GROWTH, 1998, 183 (1-2) : 109 - 116
  • [29] Float zone growth and characterization of Ge1-xSix (x≤10 at%) single crystals
    Campbell, TA
    Schweizer, M
    Dold, P
    Cröll, A
    Benz, KW
    JOURNAL OF CRYSTAL GROWTH, 2001, 226 (2-3) : 231 - 239
  • [30] Homogeneity of Ge1-xSix alloys (x ≤ 0.30) grown by the travelling solvent method
    Labrie, D
    George, AE
    Jamieson, M
    Obruchkov, S
    Healey, JP
    Paton, BE
    Saghir, MZ
    INTERNATIONAL JOURNAL OF MATERIALS & PRODUCT TECHNOLOGY, 2005, 22 (1-3): : 105 - 121