SiGe integrated mm-wave push-push VCOs with reduced power consumption

被引：0
|
作者：
Wanner, Robert [1 ]
Lachner, Rudolf [2 ]
Olbrich, Gerhard R. [1 ]
机构：
[1] Tech Univ Munich, Lehrstuhl Hochfrequenztech, Arcisstr 21, D-80333 Munich, Germany
[2] Infineon Technol AG, Munich, Germany
来源：
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM | 2006年
关键词：
D O I：
10.1109/RFIC.2006.1651184
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For use in automotive radar applications we have designed and fabricated several push-push VCOs within the frequency range 67 to 75GHz. In this paper we present one of these oscillators which can be tuned from 71.3GHz to 75.8GHz. In this tuning range the measured output power is 3.5 +/- 0.4 dBm with an DC to RF efficiency eta = 1.6 %. The measured single sideband phase noise is below -105dBc/Hz at 1 MHz offset frequency. With a reduced supply voltage the efficiency can be increased to = 3.5 % with an RF output power of 1.5 dBm. The circuits are fabricated in a production-near Si(,e:C bipolar technology. The SiGe:C bipolar transistors show a maximum transit frequency f(T) = 200 GHz and a maximum frequency of oscillation f(max) = 275 GM. For the passive circuitry transmission-line components, MIM-capacitors and integrated resistors are used.
引用
收藏
页码：433 / 436
页数：4
相关论文
共 50 条
  • [41] A LOW POWER PUSH-PUSH VCO USING MULTI-COUPLED LC TANKS
    Nagarajan, Mahalingam
    Ma, Kaixue
    Yeo, Kiat Seng
    Lim, Wei Meng
    JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, 2013, 22 (10)
  • [42] Low phase noise 58 GHz SiGe HBT push-push oscillator with simultaneous 29 GHz output
    Sinnesbichler, F.X., 2000, IEEE, Piscataway, NJ, United States (01):
  • [43] Low phase noise 58 GHz SiGe HBT push-push oscillator with simultaneous 29 GHz output
    Sinnesbichler, FX
    Hautz, B
    Olbrich, GR
    2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2000, : 35 - 38
  • [44] Design of a New K-Band Push-Push Oscillator Improving Output Power
    Lee, Hyun-Wook
    Seo, Sung-Won
    Yoon, Ki-Cheol
    Oh, Kyoung-Min
    Oh, Seung-yeon
    Nam, Hee
    Lee, Jong-Chul
    2008 IEEE ANTENNAS AND PROPAGATION SOCIETY INTERNATIONAL SYMPOSIUM, VOLS 1-9, 2008, : 3595 - 3598
  • [45] Hybrid millimeter-wave push-push oscillators using silicon-germanium HBTs
    Sinnesbichler, FX
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (02) : 422 - 430
  • [46] A 61-187.2-GHz Traveling Wave Push-Push Frequency Doubler in a 130 nm SiGe:C BiCMOS Technology With 101.7% Fractional Bandwidth
    Dedovic, Melika
    Vogelsang, Florian
    Papurcu, Hakan
    Aufinger, Klaus
    Pohl, Nils
    2023 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS, 2023, : 237 - 240
  • [47] A 30-GHz Triple-Push Oscillator on Silicon for mm-wave Applications
    Catli, Burak
    Hella, Mona M.
    ISCAS: 2009 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-5, 2009, : 2037 - 2040
  • [48] 64 to 86 GHz VCO Utilizing Push-Push Frequency Doubling in a 80 GHz fT SiGe HBT Technology
    Liu, Gang
    Ulusoy, A. Cagri
    Trasser, Andreas
    Schumacher, Hermann
    2010 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, 2010, : 239 - 242
  • [49] New Design for Output Power Improvement of a 200Hz Push-push FET DRO
    Ghadikolaei, Sahar Biazar
    Tayarani, Majid
    PROCEEDINGS OF THE 2010 IEEE ASIA PACIFIC CONFERENCE ON CIRCUIT AND SYSTEM (APCCAS), 2010, : 732 - 735
  • [50] A 94-GHz Push-Push Frequency Doubler with Peak Total Power Efficiency of 16.28%
    Chung, Woohyun
    Hong, Songcheol
    2019 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT2019), 2019,
12345