SiGe integrated mm-wave push-push VCOs with reduced power consumption

被引：0
|
作者：
Wanner, Robert [1 ]
Lachner, Rudolf [2 ]
Olbrich, Gerhard R. [1 ]
机构：
[1] Tech Univ Munich, Lehrstuhl Hochfrequenztech, Arcisstr 21, D-80333 Munich, Germany
[2] Infineon Technol AG, Munich, Germany
来源：
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM | 2006年
关键词：
D O I：
10.1109/RFIC.2006.1651184
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For use in automotive radar applications we have designed and fabricated several push-push VCOs within the frequency range 67 to 75GHz. In this paper we present one of these oscillators which can be tuned from 71.3GHz to 75.8GHz. In this tuning range the measured output power is 3.5 +/- 0.4 dBm with an DC to RF efficiency eta = 1.6 %. The measured single sideband phase noise is below -105dBc/Hz at 1 MHz offset frequency. With a reduced supply voltage the efficiency can be increased to = 3.5 % with an RF output power of 1.5 dBm. The circuits are fabricated in a production-near Si(,e:C bipolar technology. The SiGe:C bipolar transistors show a maximum transit frequency f(T) = 200 GHz and a maximum frequency of oscillation f(max) = 275 GM. For the passive circuitry transmission-line components, MIM-capacitors and integrated resistors are used.
引用
收藏
页码：433 / 436
页数：4
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