Influence of gate width on gate-channel carrier mobility in AlGaN/GaN heterostructure field-effect transistors

被引：1
|
作者：
Yang, Ming [1 ]
Ji, Qizheng [1 ]
Gao, Zhiliang [1 ]
Zhang, Shufeng [1 ]
Lin, Zhaojun [2 ]
Yuan, Yafei [1 ]
Song, Bo [1 ]
Mei, Gaofeng [1 ]
Lu, Ziwei [1 ]
He, Jihao [1 ]
机构：
[1] Beijing Orient Inst Measurement & Test, Beijing 100094, Peoples R China
[2] Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2017年 / 111卷
基金：
中国国家自然科学基金;
关键词：
AlGaN/GaN HFETs; Gate width; Carrier mobility; OUTPUT POWER; HEMTS; STRAIN; SCATTERING; SILICON; BIAS;
D O I：
10.1016/j.spmi.2017.06.023
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
For the fabricated AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate widths, the gate-channel carrier mobility is experimentally obtained from the measured current-voltage and capacitance-voltage curves. Under each gate voltage, the mobility gets lower with gate width increasing. Analysis shows that the phenomenon results from the polarization Coulomb field (PCF) scattering, which originates from the irregularly distributed polarization charges at the AlGaN/GaN interface. The device with a larger gate width is with a larger PCF scattering potential and a stronger PCF scattering intensity. As a function of gate width, PCF scattering potential shows a same trend with the mobility variation. And the theoretically calculated mobility values fits well with the experimentally obtained values. Varying gate widths will be a new perspective for the improvement of device characteristics by modulating the gate-channel carrier mobility. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：65 / 72
页数：8
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