Transport and magnetic properties of Co-doped BaFe2As2 epitaxial thin films grown on MgO substrate

被引：17
|
作者：
Mohan, Shyam [1 ]
Taen, Toshihiro [1 ]
Yagyuda, Hidenori [1 ]
Nakajima, Yasuyuki [1 ,2 ]
Tamegai, Tsuyoshi [1 ,2 ]
Katase, Takayoshi [3 ]
Hiramatsu, Hidenori [4 ]
Hosono, Hideo [3 ,4 ]
机构：
[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan
[2] Transformat Research Project Iron Pnictides TRIP, JST, Bunkyo Ku, Tokyo 1138656, Japan
[3] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[4] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2010年 / 23卷 / 10期
基金：
日本学术振兴会;
关键词：
Thin films;
D O I：
10.1088/0953-2048/23/10/105016
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report resistivity, Hall coefficient, current-voltage characteristics and magneto-optical imaging measurements of epitaxial Co-doped BaFe2As2 thin films deposited on an MgO(001) substrate. The Hall resistivity of the films has a substantial contribution arising from the anomalous Hall effect of ferromagnetic components. The critical current density (J(c)) of the films is similar to 2 MA cm(-2) at low temperatures. Differential magneto-optical images of the remnant state give similar J(c) values and also exhibit the presence of extended defects in the film.
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页数：5
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