Titanium-added praseodymium silicate high-k layers on Si(001) -: art. no. 022902

被引：70
|
作者：
Schroeder, T [1 ]
Lupina, G [1 ]
Dabrowski, J [1 ]
Mane, A [1 ]
Wenger, C [1 ]
Lippert, G [1 ]
Müssig, HJ [1 ]
机构：
[1] IHP Microelect, D-15236 Frankfurt, Germany
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 02期
关键词：
D O I：
10.1063/1.1978978
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Titanium-added praseodymium silicate layers on Si(001) are promising high-k insulators for silicon-based nanoelectronic devices. Synchrotron radiation x-ray photoelectron spectroscopy was applied to study the effect of titanium additives on the praseodymium silicate/Si system. Nondestructive depth profiling by variation of the photon energy shows that thermal annealing activates the diffusion of deposited titanium into the praseodymium silicate. A homogeneous praseodymium titanium silicate layer is formed that shows high-quality electrical properties. (c) 2005 American Institute of Physics.
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页数：3
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