Titanium-added praseodymium silicate high-k layers on Si(001) -: art. no. 022902

被引：70

作者：

Schroeder, T ^{[1
]}

Lupina, G ^{[1
]}

Dabrowski, J ^{[1
]}

Mane, A ^{[1
]}

Wenger, C ^{[1
]}

Lippert, G ^{[1
]}

Müssig, HJ ^{[1
]}

机构：

[1] IHP Microelect, D-15236 Frankfurt, Germany

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 02期

关键词：

D O I：

10.1063/1.1978978

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Titanium-added praseodymium silicate layers on Si(001) are promising high-k insulators for silicon-based nanoelectronic devices. Synchrotron radiation x-ray photoelectron spectroscopy was applied to study the effect of titanium additives on the praseodymium silicate/Si system. Nondestructive depth profiling by variation of the photon energy shows that thermal annealing activates the diffusion of deposited titanium into the praseodymium silicate. A homogeneous praseodymium titanium silicate layer is formed that shows high-quality electrical properties. (c) 2005 American Institute of Physics.

引用

页数：3

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