InAsN/GaAs(N) quantum-dot and InGaNAs/GaAs quantum-well emitters: A comparison

被引：12
|
作者：
Bais, G
Cristofoli, A
Jabeen, F
Piccin, M
Carlino, E
Rubini, S
Martelli, F
Franciosi, A
机构：
[1] INFM, Lab Nazl TASC, I-34012 Trieste, Italy
[2] Univ Trieste, Ctr Excellence Nanostruct Mat, I-34127 Trieste, Italy
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 23期
关键词：
D O I：
10.1063/1.1944899
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We compare the luminescence from InAsN/GaAs and InAsN/GaAsN quantum dots with that obtained from InGaNAsN/GaAs quantum wells grown in the same experimental system. All structures were engineered to emit near 1.3 mu m at room temperature. Quantum-dot emitters were found to exhibit higher thermal stability and did not require postgrowth annealing. The use of GaAsN barriers as opposed to GaAs barriers provided for narrower and more intense quantum-dot luminescence. (c) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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