Mask manufacturing contribution on 248nm & 193nm lithography performances

被引：0
|
作者：
Barberet, A [1 ]
Fanget, G [1 ]
Richoilley, JC [1 ]
Tissier, M [1 ]
Quere, Y [1 ]
机构：
[1] DuPont Photomasks, F-13106 Rousset, France
来源：
20TH ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY | 2000年 / 4186卷
关键词：
D O I：
暂无
中图分类号：
TP31 [计算机软件];
学科分类号：
081202 ; 0835 ;
摘要：
In this study, we focus on mask manufacturing contribution on 24Xnm & 193nm lithography performances. The masks are manufactured at DPI using both E-beam/Laser writing technologies (e-beam/laser) and two etching processes (Wet/Dry). Masks are optimized for 150nm node at wafer scale, neither RET nor tuning are used, despite of this, we obtain excellent and unexpected results for inferior nodes which highlight the robustness of the manufacturing mask processes being used.
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页码：902 / 910
页数：9
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