Nanoscale EELS analysis of elemental distribution and band-gap properties in AlGaN epitaxial layers

被引：9
|
作者：
Amari, H. [1 ]
Zhang, H. Y. [1 ]
Geelhaar, L. [2 ]
Cheze, C. [2 ]
Kappers, M. J. [3 ]
Walther, T. [1 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sir Frederick Mappin Bldg,Mappin St, Sheffield S1 3JD, S Yorkshire, England
[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
[3] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
来源：
17TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS 2011 | 2011年 / 326卷
基金：
英国工程与自然科学研究理事会;
关键词：
GROWTH;
D O I：
10.1088/1742-6596/326/1/012039
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
Aluminium gallium nitride (AlGaN) is a strong candidate for high-power and high-temperature electronic devices and short-wavelength (visible and ultraviolet) optoelectronic devices. For band-gap engineering of nitride layers, it is essential to be able to perform an accurate local measurement of their optical properties. In this work, core-loss electron energy loss spectroscopy (EELS), plasmon spectroscopy and valence EELS (VEELS) are compared for the investigation of the local chemistry and band-gap of AlGaN.
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收藏
页数：6
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