Studies of ionizing radiation effects on STAR silicon drift detectors

被引:0
|
作者
Bellwied, R [1 ]
Beuttenmuller, R [1 ]
Chen, W [1 ]
DiMassimo, D [1 ]
Dyke, H [1 ]
French, A [1 ]
Hall, JR [1 ]
Hoffmann, GW [1 ]
Humanic, TJ [1 ]
Kotov, IV [1 ]
Kraner, HW [1 ]
Li, Z [1 ]
Liaw, CJ [1 ]
Lopez, J [1 ]
Lynn, D [1 ]
Rykov, VL [1 ]
Pandey, SU [1 ]
Pruneau, C [1 ]
Schambach, J [1 ]
Sedlmeir, J [1 ]
Sugarbaker, E [1 ]
Takahashi, J [1 ]
Wilson, WK [1 ]
机构
[1] Wayne State Univ, Detroit, MI 48202 USA
关键词
D O I
暂无
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A 63 x 63mm rectangular silicon drift detector was irradiated using a Co-60 source and its performance was studied. The total accumulated dosage was 23.5 kRad. The detector's performance after room temperature annealing was studied. The detector was found to be sufficiently radiation hard for RHIC applications.
引用
收藏
页码:479 / 481
页数:3
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