Energy spectrum and transport in narrow HgTe quantum wells

被引：2
|
作者：
Germanenko, A. V. [1 ]
Minkov, G. M. [2 ]
Rut, O. E. [1 ]
Sherstobitov, A. A. [2 ]
Dvoretsky, S. A. [3 ]
Mikhailov, N. N. [3 ]
机构：
[1] Ural Fed Univ, Inst Nat Sci, Ekaterinburg 620000, Russia
[2] Russian Acad Sci, Inst Met Phys, Ural Branch, Ekaterinburg 620990, Russia
[3] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
来源：
SEMICONDUCTORS | 2015年 / 49卷 / 01期
基金：
俄罗斯基础研究基金会;
关键词：
Fourier Spectrum; Landau Level; Hole Concentration; HgTe; Hole Effective Mass;
D O I：
10.1134/S1063782615010108
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The results of an experimental study of the transport phenomena and the hole energy spectrum of two-dimensional systems in the quantum well of HgTe zero-gap semiconductor with normal arrangement of quantum-confinement subbands are presented. An analysis of the experimental data allows us to reconstruct the carrier energy spectrum near the hole subband extrema. The results are interpreted using the standard kP model.
引用
收藏
页码：39 / 43
页数：5
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