Influence of thermal annealing on the intensity of the 1.54-μm photoluminescence band in erbium-doped amorphous hydrogenated silicon

被引：6

作者：

Andreev, AA ^{[1
]}

Voronkov, VB ^{[1
]}

Golubev, VG ^{[1
]}

Medvedev, AV ^{[1
]}

Pevtsov, AB ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 1999年 / 33卷 / 01期

关键词：

D O I：

10.1134/1.1187654

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Erbium-doped a-Si:H films are prepared by magnetron sputtering of a Si-Er target at a deposition temperature of 200 degrees C. The films are then subjected to cumulative thermal annealing. A sharp increase (similar to 50-fold) in the photoluminescence intensity at a wavelength of 1.54 mu m is observed after a 15-min anneal at 300 degrees C in a nitrogen atmosphere. At an anneal temperature greater than or equal to 500 degrees C the photoluminescence signal decreases essentially to zero. The influence of thermal annealing processes is discussed in the context of the model of partial transformation of the structural network of amorphous a-Si(Er):H films. (C) 1999 American Institute of Physics. [S1063-7826(99)02201-2].

引用

页码：93 / 96

页数：4

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