Influence of thermal annealing on the intensity of the 1.54-μm photoluminescence band in erbium-doped amorphous hydrogenated silicon

被引：6
|
作者：
Andreev, AA [1 ]
Voronkov, VB [1 ]
Golubev, VG [1 ]
Medvedev, AV [1 ]
Pevtsov, AB [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 1999年 / 33卷 / 01期
关键词：
D O I：
10.1134/1.1187654
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Erbium-doped a-Si:H films are prepared by magnetron sputtering of a Si-Er target at a deposition temperature of 200 degrees C. The films are then subjected to cumulative thermal annealing. A sharp increase (similar to 50-fold) in the photoluminescence intensity at a wavelength of 1.54 mu m is observed after a 15-min anneal at 300 degrees C in a nitrogen atmosphere. At an anneal temperature greater than or equal to 500 degrees C the photoluminescence signal decreases essentially to zero. The influence of thermal annealing processes is discussed in the context of the model of partial transformation of the structural network of amorphous a-Si(Er):H films. (C) 1999 American Institute of Physics. [S1063-7826(99)02201-2].
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收藏
页码：93 / 96
页数：4
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