Structural perfection of Czochralski grown silicon crystals annealed above 1500 K under hydrostatic pressure

被引：6
|
作者：
Datsenko, L
Khrupa, V
Krasulya, S
Misiuk, A
Hartwig, J
Surma, B
机构：
[1] INST ELECTRON TECHNOL, PL-02668 WARSAW, POLAND
[2] EUROPEAN SYNCHROTRON RADIAT FACIL, F-38043 GRENOBLE, FRANCE
[3] INST ELECT MAT TECHNOL, PL-01919 WARSAW, POLAND
来源：
ACTA PHYSICA POLONICA A | 1997年 / 91卷 / 05期
关键词：
D O I：
10.12693/APhysPolA.91.929
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The structural perfection of Czochralski grown silicon crystals annealed at 1580-1620 It under hydrostatic pressure up to 10(9) Pa was investigated by X-ray diffractometry and topography supplemented by the method of absorption of infrared rays. Such treatment suppresses dissolution of oxygen-related defects. From the static Debye-Waller factor dependence on the reflection order it was concluded that large clusters or dislocation loops are the dominant type of defects for most of the samples.
引用
收藏
页码：929 / 933
页数：5
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