Circuit modeling of multiple quantum well lasers optimized by carrier tunneling

In this paper, the effect of carrier tunneling between wells on multiple-quantum well (MQW) laser characteristics is investigated. Based on the rate equations developed for 3-levels (carrier transport between 3-D, 2-D and quasi 2-D states) including carrier tunneling effect, a circuit model is proposed. According to simulation results with change of tunneling time three interesting regions of operation are obtained. The operation of the proposed laser doesn't change for tunneling time larger than a threshold value (0.1 nsec). For the tunneling time smaller than another threshold value (0.01 nsec) the operation of the laser strongly degraded. For the tunneling time between the two thresholds values the operation of the laser can be optimized, which in this paper it is done for obtaining low turn-on delay time, leading to suitable operation from simultaneous filling of the wells, high output intensity and large bandwidth points of view.