High saturation power and high gain integrated photoreceivers

被引：22
|
作者：
Tauke-Pedretti, A [1 ]
Dummer, M
Barton, JS
Sysak, MN
Raring, JW
Coldren, LA
机构：
[1] Univ Calif Santa Barbara, Dept Elect Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat Engn, Santa Barbara, CA 93106 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 10期
关键词：
offset quantum well; optical receivers; saturation power; semiconductor optical amplifiers (SOAs); waveguide photodiodes; wavelength conversion;
D O I：
10.1109/LPT.2005.854422
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel monolithically integrated semiconductor optical amplifier (SOA) receiver is presented. This receiver implements a flared SOA and tapered quantum-well detector. SOAs exhibited 22-dB unsaturated gain and 15.7-dBm output power at the 1-dB gain compression point while the receiver demonstrated 15-GHz bandwidth and -10.5-dBm sensitivity.
引用
收藏
页码：2167 / 2169
页数：3
相关论文
共 50 条
  • [21] A low-power and high-gain fully integrated CMOS LNA
    Toofan, S.
    Rahmati, A. R.
    Abrishamifar, A.
    Lahiji, G. Rolentan
    MICROELECTRONICS JOURNAL, 2007, 38 (12) : 1150 - 1155
  • [22] Evanescent Semiconductor Active Optical Isolators for Low Insertion Loss and High Gain Saturation Power
    Shimizu, Hiromasa
    Goto, Syunsuke
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2010, 28 (09) : 1414 - 1419
  • [23] Quasilinear theory of high-gain FEL saturation
    Vinokurov, NA
    Huang, Z
    Shevchenko, OA
    Kim, KJ
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 475 (1-3): : 74 - 78
  • [24] Raman gain saturation at high pump and Stokes powers
    Babin, SA
    Churkin, DV
    Kablukov, SI
    Podivilov, EV
    OPTICS EXPRESS, 2005, 13 (16): : 6079 - 6084
  • [25] Digital performance of high-speed MSM-HEMT monolithically integrated photoreceivers
    Fay, P
    Wohlmuth, W
    Caneau, C
    Chandrasekhar, S
    Adesida, I
    1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 475 - 478
  • [26] High sensitivity 12 Gb/s monolithically integrated pin-HEMT photoreceivers
    Fay, P
    Adesida, I
    Caneau, C
    Chandrasekhar, S
    1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 439 - 442
  • [27] HIGH GAIN AMPLIFIERS FOR HIGH POWER TELEVISION TRANSMITTERS
    RUSTON, J
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (03): : 416 - 416
  • [28] A high gain, high output saturation power Pr3+-doped fluoride fiber amplifier operating at 1.3 μm
    Ohishi, Yasutake
    Kanamori, Terutoshi
    Nishi, Toshihiro
    Takahashi, Shiro
    IEEE Photonics Technology Letters, 1991, 3 (08): : 715 - 717
  • [29] High Conversion Gain 30-110 GHz Photoreceivers for High Data-Rate Advanced Photonic Wireless Communications
    Umezawa, T.
    Jitsuno, K.
    Kanno, A.
    Yamamoto, N.
    Kawanishi, T.
    2016 IEEE Sixth International Conference on Communications and Electronics (ICCE), 2016, : 389 - 392
  • [30] Si Integrated Photoreceivers
    Choi, Woo-Young
    Lee, Myung-Jae
    Youn, Jin-Sung
    2010 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2010, : 77 - 81
12345