Electronic and Magnetic Properties of Mo doped Graphene; Full potential approach

被引：1
|
作者：
Thakur, Jyoti [1 ]
Singh, Mukhtiyar [2 ]
Saini, Hardev S. [3 ]
Kashyap, Manish K. [1 ]
机构：
[1] Kurukshetra Univ, Dept Phys, Kurukshetra 136119, Haryana, India
[2] Dayanand Natl PG Coll, Dept Phys, Hisar 125001, Haryana, India
[3] Panjab Univ, Dept Phys, Chandigarh 160014, India
来源：
PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON CONDENSED MATTER PHYSICS 2014 (ICCMP 2014) | 2015年 / 1661卷
关键词：
D O I：
10.1063/1.4915420
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The electronic and magnetic properties of Pristine and Mo doped Graphene have been calculated using WIEN2k implementation of full potential linearized augmented plane wave (FPLAPW) method based on Density Functional Theory (DFT). The exchange and correlation (XC) effects were taken into account by generalized gradient approximation (GGA). The calculated results show that Mo doping creates magnetism in Graphene by shifting the energy levels at E-F and opens up a channel for Graphene to be used in real nanoscale device applications. The unpaired d-electrons of Mo atom are responsible for induced magnetism in Graphene. Magnetic ordering created in Graphene in this way makes it suitable for recording media, magnetic sensors, magnetic inks and spintronic devices.
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页数：3
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