Very low drive voltage substrate removed GaAs/AlGaAs electro-optic modulators

被引：0
|
作者：
Shin, JaeHyuk [1 ]
Chang, Yu-Chia [1 ]
Dagli, Nadir [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
2007 INTERNATIONAL TOPICAL MEETING ON MICROWAVE PHOTONICS | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Mach-Zehnder intensity modulators with 0.3 V drive voltage were realized using very strongly confined GaAs/AlGaAs submicron waveguides based on substrate removal techniques. The device uses doped quantum wells as buried electrodes and its electrode is only 7 mm long. The modulation is due to very efficient use of linear electro-optic and carrier depletion effects and has high speed potential.
引用
收藏
页码：160 / 163
页数：4
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