Very low drive voltage substrate removed GaAs/AlGaAs electro-optic modulators

被引:0
|
作者
Shin, JaeHyuk [1 ]
Chang, Yu-Chia [1 ]
Dagli, Nadir [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Mach-Zehnder intensity modulators with 0.3 V drive voltage were realized using very strongly confined GaAs/AlGaAs submicron waveguides based on substrate removal techniques. The device uses doped quantum wells as buried electrodes and its electrode is only 7 mm long. The modulation is due to very efficient use of linear electro-optic and carrier depletion effects and has high speed potential.
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页码:160 / 163
页数:4
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