Ultra-high-sensitivity photodetector from ultraviolet to visible based on Ga-doped In2O3 nanowire phototransistor with top-gate structure

被引：2
|
作者：
Ran, Wenhao [1 ,2 ]
Lou, Zhen [1 ,2 ]
Shen, Guozhen [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100083, Peoples R China
来源：
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年
基金：
美国国家科学基金会;
关键词：
Ga-doped In2O3; nanowire; phototransistor and ultraviolet photoresponse;
D O I：
10.1109/EDTM50988.2021.9420831
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-performance Ga-doped In2O3 nanowire phototransistor based on top-gate structure was fabricated with gate dielectric is SiO2. By adjusting gate voltage of the phototransistor, the device can detect extremely weak ultraviolet light, with high responsivity (R) and large light-dark current ratio (I-ph/I-dark). For example, its responsivity can reach 580 A/mu W and I-ph/I-dark is maintained at similar to 10<^>5 with 300 nm illumination (0.015 mu W/cm(2)).
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页数：3
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