Ultra-high-sensitivity photodetector from ultraviolet to visible based on Ga-doped In2O3 nanowire phototransistor with top-gate structure

被引：2
|
作者：
Ran, Wenhao [1 ,2 ]
Lou, Zhen [1 ,2 ]
Shen, Guozhen [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100083, Peoples R China
来源：
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年
基金：
美国国家科学基金会;
关键词：
Ga-doped In2O3; nanowire; phototransistor and ultraviolet photoresponse;
D O I：
10.1109/EDTM50988.2021.9420831
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-performance Ga-doped In2O3 nanowire phototransistor based on top-gate structure was fabricated with gate dielectric is SiO2. By adjusting gate voltage of the phototransistor, the device can detect extremely weak ultraviolet light, with high responsivity (R) and large light-dark current ratio (I-ph/I-dark). For example, its responsivity can reach 580 A/mu W and I-ph/I-dark is maintained at similar to 10<^>5 with 300 nm illumination (0.015 mu W/cm(2)).
引用
收藏
页数：3
相关论文
共 50 条
  • [1] An ultraviolet photodetector based on In2O3/β-Ga2O3 heterojunction
    Zhang, Yongfeng
    Liu, Xinyan
    Bi, Zhengyu
    Xu, Ruiliang
    Chen, Yu
    Zhou, Jingran
    Ruan, Shengping
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 181
  • [2] Single In2O3 Nanowire Ultraviolet Phototransistor with High Optical On-off Ratio and High Responsivity
    Chen X.
    Wei Z.-P.
    Faguang Xuebao/Chinese Journal of Luminescence, 2021, 42 (02): : 208 - 214
  • [3] Broadband Ultraviolet Photodetector Based on Vertical Ga2O3/GaN Nanowire Array with High Responsivity
    He, Tao
    Zhang, Xiaodong
    Ding, Xiaoyu
    Sun, Chi
    Zhao, Yukun
    Yu, Qiang
    Ning, Jiqiang
    Wang, Rongxin
    Yu, Guohao
    Lu, Shulong
    Zhang, Kai
    Zhang, Xinping
    Zhang, Baoshun
    ADVANCED OPTICAL MATERIALS, 2019, 7 (07):
  • [4] High-performance deep-ultraviolet photodetector based on a single-crystalline ϵ-Ga2O3/Sn-doped In2O3 heterojunction
    Hu, Shudong
    Liu, Ningtao
    Li, Teng
    Han, Dongyang
    Zhuo, Hao
    Shao, Botao
    Zhang, Xiaoli
    Zhang, Wenrui
    Chen, Feng
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2025, 58 (02)
  • [5] Ultraviolet photodetector based on vertical β-Ga2O3 nanowire array on GaN substrate
    Zeng, Chunhong
    Ma, Yongjian
    Kong, Mei
    Zhang, Xiaodong
    Lin, Wenkui
    Cui, Qi
    Sun, Yuhua
    Zhang, Xuemin
    Chen, Tiwei
    Zhang, Xuan
    Zhang, Baoshun
    MATERIALS RESEARCH EXPRESS, 2021, 8 (05)
  • [6] High ultraviolet gain in Ga2O3/ZnO heterojunction photodetector based on MSM structure
    Li, Haoda
    Jiang, Dayong
    Zhao, Man
    Journal of Alloys and Compounds, 2024, 1005
  • [7] High ultraviolet gain in Ga2O3/ZnO heterojunction photodetector based on MSM structure
    Li, Haoda
    Jiang, Dayong
    Zhao, Man
    JOURNAL OF ALLOYS AND COMPOUNDS, 2024, 1005
  • [8] Preparation of high performance Ga2O3 based ultraviolet photodetector by CVD
    Wang X.
    Cheng Q.
    Rong X.
    Han S.
    Zeng Y.
    Cao P.
    Fang M.
    Liu W.
    Zhu D.
    Lu Y.
    Journal of Solid State Chemistry, 2023, 317
  • [9] Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In2O3) nanowire phase change random access memory
    Jin, Bo
    Lim, Taekyung
    Ju, Sanghyun
    Latypov, Marat I.
    Pi, Dong-Hai
    Kim, Hyoung Seop
    Meyyappan, M.
    Lee, Jeong-Soo
    APPLIED PHYSICS LETTERS, 2014, 104 (10)
  • [10] Flexible Solar-Blind Ultraviolet Photodetector Based on β-Ga2O3 Nanowire Channel Bridge Structure: Combining High Responsivity and Strain Stability
    Liu, Jinyun
    Ma, Tengfei
    Tian, Huihui
    Zhang, Wuxu
    Liu, Zhaopeng
    Gao, Zhiyi
    Bian, Baoru
    Wu, Yuanzhao
    Liu, Yiwei
    Shang, Jie
    Li, Run-Wei
    SENSORS, 2025, 25 (05)
12345