All-polymeric planar waveguide devices based on a gas-assisted thermal imprinting technique

被引:4
作者
Wan, Lei [1 ]
Zhu, Ning [1 ]
Zhang, Rui-ying [2 ]
Mei, Ting [3 ,4 ]
机构
[1] South China Normal Univ, Inst Optoelect Mat & Technol, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Guangdong, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Labs Nanodevices & Applicat, Suzhou 215123, Peoples R China
[3] Northwestern Polytech Univ, Minist Educ, Key Lab Space Appl Phys & Chem, Xian 710072, Shaanxi, Peoples R China
[4] Northwestern Polytech Univ, Sch Sci, Shanxi Key Lab Opt Informat Technol, Xian 710072, Shaanxi, Peoples R China
来源
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2017年 / 23卷 / 12期
基金
中国国家自然科学基金;
关键词
NANOIMPRINT LITHOGRAPHY; FABRICATION; ALIGNMENT;
D O I
10.1007/s00542-017-3297-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In order to improve accuracy of replication and to simplify the fabrication process for imprinted all-polymeric planar optical waveguides and devices, the three-stage thermal imprinting technique with gas pressure load were developed to optimize the cross-sectional profile morphologies of polymer trenches directly fabricated on polymethylmethacrylate (PMMA) sheets. As a result, our investigation found that the choice of the imprinting pressure was directly dependent on the imprinting temperature. The shortest imprinting temperature holding time was correlated with combination of them. The conformal polymer waveguide patterns were obtained under uniform and low gas pressure. As a verification for a simple and efficient gas-assisted thermal imprinting technique, the 8 x 8 mu m(2) solid PMMA based all-polymeric single-mode planar waveguides and planar lightwave circuit devices including a 1 x 2 splitter and a 1 x 4 splitter were fabricated and characterized at the wavelength of 1550 nm. The propagation loss coefficient of these all-polymeric planar waveguides was measured to be 1.63 +/- 0.02 dB/cm.
引用
收藏
页码:5271 / 5279
页数:9
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