Epitaxial relationships of para-sexiphenyl thin films on alkali halide substrates

被引：14
|
作者：
Yoshimoto, N [1 ]
Sato, T
Saito, Y
Ogawa, S
机构：
[1] Iwate Univ, Dept Mat Sci & Engn, Morioka, Iwate 0208551, Japan
[2] Kyoto Inst Technol, Dept Elect & Informat Sci, Kyoto 6068585, Japan
[3] Iwate Univ, Dept Chem Engn, Morioka, Iwate 0208551, Japan
来源：
MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2004年 / 425卷
关键词：
epitaxial relationships; in-plane orientation; para-sexiphenyl; X-ray diffraction;
D O I：
10.1080/15421400490506379
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The dependence of substrates on the epitaxial relationship of vapor deposited thin films p-sexiphenyl (p-6P) was investigated by X-ray diffractmetry. The cleaved (001) surfaces of single crystals of NaCl, KCl and KBr were used for the substrate. The temperature dependence of the film structure was also examined between 50degreesC and 170degreesC. The epitaxial relationships of both standing and lying orientations were determined for the films grown on each substrate. The observed complex patterns of in-plane orientations were explained in terms of misfit ratio.
引用
收藏
页码：279 / 288
页数：10
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