Low LO power V-band CPW down-converter using a GaAs PHEMT

被引：0

作者：

An, D ^{[1
]}

Lee, BH ^{[1
]}

Chae, YS ^{[1
]}

Park, HC ^{[1
]}

Park, HM ^{[1
]}

Rhee, JK ^{[1
]}

机构：

[1] Dongguk Univ, Dept Elect Engn, Millimeter Wave Innovat Technol Res Ctr, Seoul 100715, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2002年 / 41卷 / 06期

关键词：

LO power; V-band; MIMIC; CPW; GaAs; down-converter;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have designed and fabricated a low local oscillator (LO) power V-band coplanar waveguide (CPW) down-converter using GaAs Pseudomorphic high electron mobility transistor (PHEMT) technology for applications to millimeter-wave wireless communication systems. The down-converter was designed using a MIMIC library, including a 0.1-mum GaAs PHEMT and CPW transmission lines. The fabricated down-converter exhibited a good conversion gain of 2 dB at a low LO power of 0 dBm. The 1 dB compression point was -5.2 dBm for an RF input power of -6 dBm. Isolations between the LO port and other ports were excellent. The total chip size was 1.8x1.7 mm.

引用

页码：1013 / 1016

页数：4

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