Low LO power V-band CPW down-converter using a GaAs PHEMT

被引：0
|
作者：
An, D [1 ]
Lee, BH [1 ]
Chae, YS [1 ]
Park, HC [1 ]
Park, HM [1 ]
Rhee, JK [1 ]
机构：
[1] Dongguk Univ, Dept Elect Engn, Millimeter Wave Innovat Technol Res Ctr, Seoul 100715, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2002年 / 41卷 / 06期
关键词：
LO power; V-band; MIMIC; CPW; GaAs; down-converter;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have designed and fabricated a low local oscillator (LO) power V-band coplanar waveguide (CPW) down-converter using GaAs Pseudomorphic high electron mobility transistor (PHEMT) technology for applications to millimeter-wave wireless communication systems. The down-converter was designed using a MIMIC library, including a 0.1-mum GaAs PHEMT and CPW transmission lines. The fabricated down-converter exhibited a good conversion gain of 2 dB at a low LO power of 0 dBm. The 1 dB compression point was -5.2 dBm for an RF input power of -6 dBm. Isolations between the LO port and other ports were excellent. The total chip size was 1.8x1.7 mm.
引用
收藏
页码：1013 / 1016
页数：4
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